Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9333TRPBF IRF9333TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017557-IRF9333TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.2A (Ta) Gate-Source Threshold Voltage: 2.4V @ 25μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1110pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19.4 mOhm @ 9.2A, 10V Alternative Parts (Cross-Reference): SI4435DY-NL; STS9P3LLH6; IRF9333TRPbF; IRF9333PbF; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 017557-IRF9333TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.2A (Ta) Gate-Source Threshold Voltage: 2.4V @ 25μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1110pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19.4 mOhm @ 9.2A, 10V Alternative Parts (Cross-Reference): SI4435DY-NL; STS9P3LLH6; IRF9333TRPbF; IRF9333PbF; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9333TRPBF - 017557-IRF9333TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9333TRPBF
017557-IRF9333TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9333TRPBF 017557-IRF9333TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017557-IRF9333TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.2A (Ta) Gate-Source Threshold Voltage: 2.4V @ 25μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1110pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19.4 mOhm @ 9.2A, 10V Alternative Parts (Cross-Reference): SI4435DY-NL; STS9P3LLH6; IRF9333TRPbF; IRF9333PbF; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 017557-IRF9333TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.2A (Ta)
Gate-Source Threshold Voltage: 2.4V @ 25μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1110pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19.4 mOhm @ 9.2A, 10V
Alternative Parts (Cross-Reference): SI4435DY-NL; STS9P3LLH6; IRF9333TRPbF; IRF9333PbF;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRF9333TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9333TRPBFTR-ND
Single FETs, MOSFETs IRF9333TRPBFTR-ND
P-Channel 30V 9.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

P-Channel 30V 9.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
30V 9.2A MOSFET Transistor - 278-IRF9333TRPBF - ERSAELECTRONICS PTE. LTD.
Singapore
30V 9.2A MOSFET Transistor
278-IRF9333TRPBF
30V 9.2A MOSFET Transistor 278-IRF9333TRPBF
MOSFET P-CH 30V 9.2A 8SO Product overview: IRF9333TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9333TRPBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 9.2A 8SO Product overview: IRF9333TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9333TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9333TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9333TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9333TRPBF
MOSFET P-CH 30V 9.2A 8SO

MOSFET P-CH 30V 9.2A 8SO

Supplier's Site
Single FETs, MOSFETs - IRF9333TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF9333TRPBF
Single FETs, MOSFETs IRF9333TRPBF
MOSFET P-CH 30V 9.2A 8SO

MOSFET P-CH 30V 9.2A 8SO

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017557-IRF9333TRPBF IRF9333TRPBFTR-ND 278-IRF9333TRPBF IRF9333TRPBF IRF9333TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9333TRPBF Single FETs, MOSFETs 30V 9.2A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 30 volts 30 volts
PD 2500 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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