Infineon Technologies AG P-Channel Power MOSFET IRF9321

Description
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Applications In-vehicle infotainment (IVI) & HMI Benefits Optimized for broadest availability from distribution partners Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level) Reduced design complexity in high-side configuration (vs N-channel device) Easier interface to Microcontroller (vs N-channel device) Designers who used this product also designed with IRS2092SPBF | Discrete Class D Audio Amplifier ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET CYT2B75BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series IRS2092SPBF | Discrete Class D Audio Amplifier ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET CYT2B75BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series IRS2092SPBF | Discrete Class D Audio Amplifier ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET CYT2B75BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series
  • P-Channel Power MOSFET - IRF9321 - Infineon Technologies AG
    Infineon Technologies AG
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Description
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Applications In-vehicle infotainment (IVI) & HMI Benefits Optimized for broadest availability from distribution partners Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level) Reduced design complexity in high-side configuration (vs N-channel device) Easier interface to Microcontroller (vs N-channel device) Designers who used this product also designed with IRS2092SPBF | Discrete Class D Audio Amplifier ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET CYT2B75BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series IRS2092SPBF | Discrete Class D Audio Amplifier ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET CYT2B75BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series IRS2092SPBF | Discrete Class D Audio Amplifier ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET CYT2B75BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series
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Datasheet
Datasheet Summary
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The IRF9321PbF is a P-channel HEXFET power MOSFET in an SO-8 package, rated for a drain-to-source voltage of -30 V and a continuous drain current of -15 A at 25°C. It has a maximum on-resistance of 7.2 mΩ at -10 V gate-source voltage and 11.2 mΩ at -4.5 V gate-source voltage. The device is RoHS compliant, operates within a junction temperature range of -55°C to 150°C, and meets JEDEC JESD47F and J-STD-020D standards with MSL1 moisture sensitivity level. The SO-8 package measures 4.9 mm × 3.9 mm with a 1.75 mm lead pitch.

Datasheet Summary
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The IRF9321PbF is a P-channel HEXFET power MOSFET in an SO-8 package, rated for a drain-to-source voltage of -30 V and a continuous drain current of -15 A at 25°C. It has a maximum on-resistance of 7.2 mΩ at -10 V gate-source voltage and 11.2 mΩ at -4.5 V gate-source voltage. The device is RoHS compliant, operates within a junction temperature range of -55°C to 150°C, and meets JEDEC JESD47F and J-STD-020D standards with MSL1 moisture sensitivity level. The SO-8 package measures 4.9 mm × 3.9 mm with a 1.75 mm lead pitch.

Suppliers

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P-Channel Power MOSFET - IRF9321 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
P-Channel Power MOSFET
IRF9321
P-Channel Power MOSFET IRF9321
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Applications In-vehicle infotainment (IVI) & HMI Benefits Optimized for broadest availability from distribution partners Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level) Reduced design complexity in high-side configuration (vs N-channel device) Easier interface to Microcontroller (vs N-channel device) Designers who used this product also designed with IRS2092SPBF | Discrete Class D Audio Amplifier ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET CYT2B75BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series IRS2092SPBF | Discrete Class D Audio Amplifier ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET CYT2B75BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series IRS2092SPBF | Discrete Class D Audio Amplifier ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET CYT2B75BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series

-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package


Applications

  • In-vehicle infotainment (IVI) & HMI

Benefits

  • Optimized for broadest availability from distribution partners
  • Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)
  • Reduced design complexity in high-side configuration (vs N-channel device)
  • Easier interface to Microcontroller (vs N-channel device)

Designers who used this product also designed with


  • IRS2092SPBF |
    Discrete Class D Audio Amplifier ICs
  • IPD70R360P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • CYT2B75BADQ0AZEGST |
    TRAVEO™ T2G CYT2B7 Series
  • IRS2092SPBF |
    Discrete Class D Audio Amplifier ICs
  • IPD70R360P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • CYT2B75BADQ0AZEGST |
    TRAVEO™ T2G CYT2B7 Series
  • IRS2092SPBF |
    Discrete Class D Audio Amplifier ICs
  • IPD70R360P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • CYT2B75BADQ0AZEGST |
    TRAVEO™ T2G CYT2B7 Series
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRF9321
Product Name P-Channel Power MOSFET
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
rDS(on) 0.0072 ohms
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