MOSFET N-CH 30V 14A 8SO
IRF8714 - HEXFET POWER MOSFET
IRF8714 - HEXFET Power MOSFET
N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SO
MOSFET N-CH 30V 14A 8SO Product overview: IRF8714TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8714TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017551-IRF8714TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Ta)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 1020pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.7 mOhm @ 14A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
MOSFET, N-CH, 30V, 14A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0071ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 30V 14A 8SO
MOSFET, TRANSISTOR POLARITY: N CHANNEL, CONTINUOUS DRAIN CURRENT ID:14A, DRAIN SOURCE VOLTAGE VDS:30V, ON RESISTANCE RDS(ON):0.0071OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:1.8V. FREE 2 YEAR RADWELL WARRANTY
MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC Qg
| ODG (Origin Data Global) | Rochester Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF8714TRPBF | IRF8714TRPBF | IRF8714TRPBFDKR-ND | 278-IRF8714TRPBF | 017551-IRF8714TRPBF | 2579329 | 13AC9214 | IRF8714TRPBF | 108061966 | IRF8714TRPBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 30V 14A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8714TRPBF | MOSFETs | Mosfet, N-Ch, 30V, 14A, Soic; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||||
| IDSS | 14000 milliamps | 14000 milliamps | ||||||||
| PD | 2500 milliwatts | 2.5 milliwatts | 2500 milliwatts |
