N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 017550-IRF8707GTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 9.3nC @ 4.5V
Max Input Capacitance: 760pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.9 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
MOSFET N-CH 30V 11A 8SO Product overview: IRF8707GTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8707GTRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 11A 8SO
MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC
MOSFET, N-CH, 30V, 11A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0093ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF8707GTRPBFTR-ND | 017550-IRF8707GTRPBF | 278-IRF8707GTRPBF | IRF8707GTRPBF | IRF8707GTRPBF | 91Y4759 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8707GTRPBF | 30V 11A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 11A, Soic-8; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | Tape & Reel (TR) | 760 pF @ 15 V | TO-3 | |
| V(BR)DSS | 30 volts | |||||
| PD | 2500 milliwatts | 2.5 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
