Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8113GPBF IRF8113GPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1046746-IRF8113GPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17.2A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 36nC @ 4.5V
Max Input Capacitance: 2910pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.6 mOhm @ 17.2A, 10V
Alternative Parts (Cross-Reference): FDS7066SN3; IRF8113; IRF7805ZTR;
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Application Field: Used in Computers & Computer Peripherals, Power Management, Communications & Networking
Quantity per package: 95

N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO