Infineon Technologies AG 30V 17.2A MOSFET Transistor IRF8113GPBF

MOSFET N-CH 30V 17.2A 8SO Product overview: IRF8113GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 17.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 17.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8113GPBF can be used for catalog matching and distributor lookup.

N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Manufacturer: Infineon Technologies
Win Source Part Number: 1046746-IRF8113GPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17.2A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 36nC @ 4.5V
Max Input Capacitance: 2910pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.6 mOhm @ 17.2A, 10V
Alternative Parts (Cross-Reference): FDS7066SN3; IRF8113; IRF7805ZTR;
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Application Field: Used in Computers & Computer Peripherals, Power Management, Communications & Networking
Quantity per package: 95