The IRF8010S/LPbF is a surface-mount N-channel MOSFET designed for high-frequency DC-DC converters, UPS, and motor control applications. It is packaged in a TO-262 case with a maximum continuous drain current of 80 A at 25°C and a drain-to-source breakdown voltage of 100 V. The on-resistance is specified at a maximum of 15 mΩ at 10 V gate bias, with a power dissipation of 260 W. The device meets RoHS standards and is qualified for industrial use. Thermal resistance from junction to case is 0.57 °C/W typical, and the operating junction temperature range is -55°C to 175°C.
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:260W; No. of Pins:3Pins RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 32AC0761 |
| Product Name | Channel Type Infineon |
| Package Type | TO-3 |
