Infineon Technologies AG N-Channel Power MOSFET IRF8010S

Description
100V Single N-Channel IR MOSFET in a D2Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered
  • N-Channel Power MOSFET - IRF8010S - Infineon Technologies AG
    Infineon Technologies AG
  • Electronic Surplus - IRF8010S - 1187386-IRF8010S - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
100V Single N-Channel IR MOSFET in a D2Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRF8010S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRF8010S
N-Channel Power MOSFET IRF8010S
100V Single N-Channel IR MOSFET in a D2Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered

100V Single N-Channel IR MOSFET in a D2Pak package


Benefits

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered
Supplier's Site Datasheet
Electronic Surplus - IRF8010S - 1187386-IRF8010S - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IRF8010S
1187386-IRF8010S
Electronic Surplus - IRF8010S 1187386-IRF8010S
Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1187386-IRF8010S Manufacturer Homepage: www.irf.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 1187386-IRF8010S
Manufacturer Homepage: www.irf.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF8010S 1187386-IRF8010S
Product Name N-Channel Power MOSFET Electronic Surplus - IRF8010S
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0150 ohms
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