Infineon Technologies AG N-Channel Power MOSFET IRF8010S

IRF8010S is an N-channel MOSFET designed for high-frequency DC-DC converters, UPS, and motor control applications, housed in a D2Pak (TO-263) package. It has a maximum drain-to-source voltage of 100V, a continuous drain current of 80A at 25°C, and a typical on-resistance of 12mΩ at 10V gate voltage. The device features low gate-to-drain charge to reduce switching losses, and is fully characterized for capacitance and avalanche performance, with a single pulse avalanche energy rating of 310mJ. Thermal resistance from junction to case is 0.57°C/W, and junction temperature ranges from -55°C to 175°C. The package is suitable for surface-mount assembly and supports reflow soldering.