Infineon Technologies AG N-Channel Power MOSFET IRF7907

Description
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package Benefits RoHS Compliant Low RDS(on) Low Thermal resistance to PCB Compatible with Existing Surface Mount Techniques Low RDS(ON) at 4.5V VGS Very Low Gate Charge Dual N-Channel MOSFET Applications Convenient, smart, and secure wearables supporting your health and well-being.
  • N-Channel Power MOSFET - IRF7907 - Infineon Technologies AG
    Infineon Technologies AG
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Description
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package Benefits RoHS Compliant Low RDS(on) Low Thermal resistance to PCB Compatible with Existing Surface Mount Techniques Low RDS(ON) at 4.5V VGS Very Low Gate Charge Dual N-Channel MOSFET Applications Convenient, smart, and secure wearables supporting your health and well-being.
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Datasheet
Datasheet Summary
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30V dual N-channel HEXFET power MOSFET in a SO-8 package, designed for point-of-load converters in notebook computers, servers, graphics cards, game consoles, and set-top boxes. Each device features a low on-resistance: Q1 at 16.4 mΩ and Q2 at 11.8 mΩ at V_GS = 10V, with improved body diode reverse recovery characteristics. The package supports continuous drain currents up to 9.1 A for Q1 and 11 A for Q2 at 25°C, with a maximum gate-to-source voltage of ±20 V. Thermal resistance is 62.5 °C/W from junction to ambient, and the operating junction temperature ranges from -55°C to +150°C. The part is lead-free and fully characterized for avalanche voltage and current.

Datasheet Summary
Powered by GS/AI

30V dual N-channel HEXFET power MOSFET in a SO-8 package, designed for point-of-load converters in notebook computers, servers, graphics cards, game consoles, and set-top boxes. Each device features a low on-resistance: Q1 at 16.4 mΩ and Q2 at 11.8 mΩ at V_GS = 10V, with improved body diode reverse recovery characteristics. The package supports continuous drain currents up to 9.1 A for Q1 and 11 A for Q2 at 25°C, with a maximum gate-to-source voltage of ±20 V. Thermal resistance is 62.5 °C/W from junction to ambient, and the operating junction temperature ranges from -55°C to +150°C. The part is lead-free and fully characterized for avalanche voltage and current.

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRF7907 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRF7907
N-Channel Power MOSFET IRF7907
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package Benefits RoHS Compliant Low RDS(on) Low Thermal resistance to PCB Compatible with Existing Surface Mount Techniques Low RDS(ON) at 4.5V VGS Very Low Gate Charge Dual N-Channel MOSFET Applications Convenient, smart, and secure wearables supporting your health and well-being.

30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package

Benefits

  • RoHS Compliant
  • Low RDS(on)
  • Low Thermal resistance to PCB
  • Compatible with Existing Surface Mount Techniques
  • Low RDS(ON) at 4.5V VGS
  • Very Low Gate Charge
  • Dual N-Channel MOSFET

Applications

  • Convenient, smart, and secure wearables supporting your health and well-being.
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRF7907
Product Name N-Channel Power MOSFET
Polarity N-Channel; N+N
Transistor Technology / Material Si/SiC
rDS(on) 0.0118 to 0.0164 ohms
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