Infineon Technologies AG 100V 8.3A MOSFET Transistor IRF7853PBF

Description
MOSFET N-CH 100V 8.3A 8SO Product overview: IRF7853PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 8.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7853PBF can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 100V 8.3A 8SO Product overview: IRF7853PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 8.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7853PBF can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
100V 8.3A MOSFET Transistor - 278-IRF7853PBF - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
100V 8.3A MOSFET Transistor
278-IRF7853PBF
100V 8.3A MOSFET Transistor 278-IRF7853PBF
MOSFET N-CH 100V 8.3A 8SO Product overview: IRF7853PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 8.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7853PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 8.3A 8SO Product overview: IRF7853PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 8.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7853PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7853PBF - 261820-F7853 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7853PBF
261820-F7853
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7853PBF 261820-F7853
Manufacturer: Infineon Technologies Win Source Part Number: 261820-F7853 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 8.3A (Ta) Gate-Source Threshold Voltage: 4.9V @ 100μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 1640pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 8.3A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 261820-F7853
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8.3A (Ta)
Gate-Source Threshold Voltage: 4.9V @ 100μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1640pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 8.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRF7853PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7853PBF-ND
Single FETs, MOSFETs IRF7853PBF-ND
N-Channel 100V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 100V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S - 70017361 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S
70017361
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S 70017361
The IRF7853PbF is designed for AC-DC secondary-side synchronous rectification, isolated medium-power DC-DC applications. The 100V IRF7853 is also optimized for wide-range communication bus input (36V to 75V) primary-side bridge topologies in isolated DC-DC bus converters. The 80V IRF7854 is useful for active ORing and hot-swap applications. All three of the MOSFETs are designed for secondary-side synchronous rectification in 5-19Vout flyback converter and resonant half-bridge applications and are suitable for isolated DC-DC applications as primary-side switches in forward or push-pull topologies for 18-36Vin isolated DC-DC converters. Together with IRs low-voltage MOSFETs and controller ICs, these mid-range MOSFETs form secondary-side chipsets for medium-power, converter applications. In addition, when combined with the SmartRectifierTM IR1167 in AC-DC power supplies such as laptop adaptors, for example, these new SO-8 devices can replace two of their large TO-220 MOSFET counterparts and their associated heatsinks, improving overall system efficiency by as much as 1%. "Applications Primary Side Switch in Bridge Topology in Universal Input (36-75Vin) Isolated DC-DC Converters Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters Secondary Side Synchronous Rectification Switch for 15Vout Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage"

The IRF7853PbF is designed for AC-DC secondary-side synchronous rectification, isolated medium-power DC-DC applications.
The 100V IRF7853 is also optimized for wide-range communication bus input (36V to 75V) primary-side bridge topologies in isolated DC-DC bus converters. The 80V IRF7854 is useful for active ORing and hot-swap applications. All three of the MOSFETs are designed for secondary-side synchronous rectification in 5-19Vout flyback converter and resonant half-bridge applications and are suitable for isolated DC-DC applications as primary-side switches in forward or push-pull topologies for 18-36Vin isolated DC-DC converters.
Together with IRs low-voltage MOSFETs and controller ICs, these mid-range MOSFETs form secondary-side chipsets for medium-power, converter applications. In addition, when combined with the SmartRectifierTM IR1167 in AC-DC power supplies such as laptop adaptors, for example, these new SO-8 devices can replace two of their large TO-220 MOSFET counterparts and their associated heatsinks, improving overall system efficiency by as much as 1%.
"Applications
Primary Side Switch in Bridge Topology in Universal Input (36-75Vin) Isolated DC-DC Converters
Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters
Secondary Side Synchronous Rectification Switch for 15Vout
Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications
Benefits
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage"

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7853PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7853PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7853PBF
MOSFET N-CH 100V 8.3A 8SO

MOSFET N-CH 100V 8.3A 8SO

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-IRF7853PBF 261820-F7853 IRF7853PBF-ND 70017361 IRF7853PBF
Product Name 100V 8.3A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7853PBF Single FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 2500 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tube SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" SO-8 8-SOIC (0.154, 3.90mm Width)
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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