MOSFET N-CH 30V 20A 8SO Product overview: IRF7832TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7832TRPBF can be used for catalog matching and distributor lookup.
IRF7832PbF - N-Channel HEXFET Power MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 001959-IRF7832TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: IRF7832
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 155°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 2.32V @ 250μA
Max Gate Charge: 51nC @ 4.5V
Max Input Capacitance: 4310pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): FDS8812NZ; Si4324DY-T1-GE3; SI4324DY-T1-E3; Si4626DY;
Introduction Date: September 29, 2004
ECCN: EAR99
Country of Origin: Austria, China, Malaysia, Mexico, Philippines, Taiwan, Thailand, United Kingdom
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 20A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 30V 20A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 30V 20A (Ta) 2.5W (Ta) Surface Mount 8-SO
MOSFET MOSFT 30V 20A 4mOhm 34nC
MOSFET N-CH 30V 20A 8SO
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 30V, 0.004OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8. FREE 2 YEAR RADWELL WARRANTY
POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 30V, 0.004OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 30V 20A 8SO
30V 20A 2.5W 4mΩ@10V,20A 2.32V@250uA N Channel SOIC-8 MOSFETs ROHS
MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.32V; Power Dissipation:2.5W RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Rochester Electronics | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF7832TRPBF | 8273896P | 8273896 | IRF7832TRPBF | 001959-IRF7832TRPBF | IRF7832PBFCT-ND | IRF7832TRPBF | IRF7832TRPBF | 17404780 | IRF7832TRPBF | IRF7832TRPBF | 39M3588 |
| Product Name | 30V 20A MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7832TRPBF | Single FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet; Channel Type Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||||||
| Transconductance | 0.0770 kS | |||||||||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts |
