Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7831TRPBF IRF7831TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 092774-IRF7831TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: IRF7831 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 2.35V @ 250μA Max Gate Charge: 60nC @ 4.5V Max Input Capacitance: 6240pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): SI4626DY-T1-E3; Si4626DY; Si4406DY; Introduction Date: September 21, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Application Field: Used in Computers & Computer Peripherals, Communications & Networking, Power Management
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7831TRPBF - 092774-IRF7831TRPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF7831TRPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRF7831PBFCT-ND - DigiKey
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  • Single FETs, MOSFETs - IRF7831PBFTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IRF7831PBFDKR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7831TRPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 30V, 21A, 150Deg C, 2.5W; Transistor Polarity Infineon - 99AC3986 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 092774-IRF7831TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: IRF7831 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 2.35V @ 250μA Max Gate Charge: 60nC @ 4.5V Max Input Capacitance: 6240pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): SI4626DY-T1-E3; Si4626DY; Si4406DY; Introduction Date: September 21, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Application Field: Used in Computers & Computer Peripherals, Communications & Networking, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7831TRPBF - 092774-IRF7831TRPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7831TRPBF
092774-IRF7831TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7831TRPBF 092774-IRF7831TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 092774-IRF7831TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: IRF7831 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 2.35V @ 250μA Max Gate Charge: 60nC @ 4.5V Max Input Capacitance: 6240pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): SI4626DY-T1-E3; Si4626DY; Si4406DY; Introduction Date: September 21, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Application Field: Used in Computers & Computer Peripherals, Communications & Networking, Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 092774-IRF7831TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: IRF7831
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 21A (Ta)
Gate-Source Threshold Voltage: 2.35V @ 250μA
Max Gate Charge: 60nC @ 4.5V
Max Input Capacitance: 6240pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 3.6 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): SI4626DY-T1-E3; Si4626DY; Si4406DY;
Introduction Date: September 21, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Application Field: Used in Computers & Computer Peripherals, Communications & Networking, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - IRF7831TRPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF7831TRPBF
Single FETs, MOSFETs IRF7831TRPBF
MOSFET N-CH 30V 21A 8SO

MOSFET N-CH 30V 21A 8SO

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF7831PBFCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7831PBFCT-ND
Single FETs, MOSFETs IRF7831PBFCT-ND
N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - IRF7831PBFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7831PBFTR-ND
Single FETs, MOSFETs IRF7831PBFTR-ND
N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - IRF7831PBFDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7831PBFDKR-ND
Single FETs, MOSFETs IRF7831PBFDKR-ND
N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF7831TRPBF
MOSFET IRF7831TRPBF
MOSFET MOSFT 30V 21A 3.6mOhm 40nC

MOSFET MOSFT 30V 21A 3.6mOhm 40nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7831TRPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7831TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7831TRPBF
MOSFET N-CH 30V 21A 8SO

MOSFET N-CH 30V 21A 8SO

Supplier's Site
Mosfet, N-Ch, 30V, 21A, 150Deg C, 2.5W; Transistor Polarity Infineon - 99AC3986 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 21A, 150Deg C, 2.5W; Transistor Polarity Infineon
99AC3986
Mosfet, N-Ch, 30V, 21A, 150Deg C, 2.5W; Transistor Polarity Infineon 99AC3986
MOSFET, N-CH, 30V, 21A, 150DEG C, 2.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 21A, 150DEG C, 2.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 092774-IRF7831TRPBF IRF7831TRPBF IRF7831PBFCT-ND IRF7831TRPBF IRF7831TRPBF 99AC3986
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7831TRPBF Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 21A, 150Deg C, 2.5W; Transistor Polarity Infineon
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154, 3.90mm Width) TO-3
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