MOSFET N-CH 150V 375A DIRECTFET Product overview: IRF7779L2TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 375A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 375A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7779L2TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 746296-IRF7779L2TRPB
Family Name: IRF7779L2
Manufacturer Homepage: www.irf.com
Reference case: DIRECTFET
Reference Date Code: 16+Rohs
Alternative Parts (Cross-Reference): IRF7779L2TR1PBF;
Introduction Date: November 17, 2009
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
N-Channel 150V 67A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
N-Channel 150V 67A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
N-Channel 150V 67A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
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MOSFET N-CH 150V 375A DIRECTFET
MOSFET N-CH 150V 375A DIRECTFET
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MOSFET, N-CH, 150V, 67A, 175DEG C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:67A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2605941P | 278-IRF7779L2TRPBF | 746296-IRF7779L2TRPBF | IRF7779L2TRPBFTR-ND | IRF7779L2TRPBF | IRF7779L2TRPBF | IRF7779L2TRPBF | 91Y4756 |
| Product Name | MOSFETs | 150V 375A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7779L2TRPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 150V, 67A, 175Deg C, 125W; Channel Type Infineon |
| Package Type | DirectFET | Tape & Reel (TR) | SOT3 | DirectFET™ Isometric L8 | DirectFET™ Isometric L8 | DirectFETTM Isometric L8 | TO-3 | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 150 volts | 150 volts | ||||||
| PD | 125 milliwatts | 3300 milliwatts |
