Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7534D1TRPBF IRF7534D1TRPBF

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065519-IRF7534D1TRP BF Packaging: Tape and Reel Drain to Source Voltage (Vdss): -20 V Number of Elements: 1 Power Dissipation: 1.25 W Number of Pins: 8 Rise Time: 46 ns Fall Time: 64 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 10 ns Continuous Drain Current (ID): 4.3 A Turn-Off Delay Time: 60 ns Gate to Source Voltage (Vgs): 12 V
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Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065519-IRF7534D1TRP BF Packaging: Tape and Reel Drain to Source Voltage (Vdss): -20 V Number of Elements: 1 Power Dissipation: 1.25 W Number of Pins: 8 Rise Time: 46 ns Fall Time: 64 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 10 ns Continuous Drain Current (ID): 4.3 A Turn-Off Delay Time: 60 ns Gate to Source Voltage (Vgs): 12 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7534D1TRPBF - 1065519-IRF7534D1TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7534D1TRPBF
1065519-IRF7534D1TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7534D1TRPBF 1065519-IRF7534D1TRPBF
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065519-IRF7534D1TRP BF Packaging: Tape and Reel Drain to Source Voltage (Vdss): -20 V Number of Elements: 1 Power Dissipation: 1.25 W Number of Pins: 8 Rise Time: 46 ns Fall Time: 64 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 10 ns Continuous Drain Current (ID): 4.3 A Turn-Off Delay Time: 60 ns Gate to Source Voltage (Vgs): 12 V

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1065519-IRF7534D1TRPBF
Packaging: Tape and Reel
Drain to Source Voltage (Vdss): -20 V
Number of Elements: 1
Power Dissipation: 1.25 W
Number of Pins: 8
Rise Time: 46 ns
Fall Time: 64 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Turn-On Delay Time: 10 ns
Continuous Drain Current (ID): 4.3 A
Turn-Off Delay Time: 60 ns
Gate to Source Voltage (Vgs): 12 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1065519-IRF7534D1TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7534D1TRPBF
PD 1250 milliwatts
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