Infineon Technologies AG Single FETs, MOSFETs IRF7526D1TR

P-Channel 30V 2A (Ta) 1.25W (Ta) Surface Mount Micro8™

MOSFET P-CH 30V 2A MICRO8 Product overview: IRF7526D1TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7526D1TR can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1187327-IRF7526D1TR
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: Micro8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-TSSOP, 8-MSOP
Power Dissipation (Maximum): 1.25W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 2A
Rds On (Maximum) at Id, Vgs: 200mOhm at 1.2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 11nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 25V