The IRF7490PbF is an N-channel power MOSFET designed for high-frequency DC-DC converters, housed in an SO-8 package. It has a maximum drain-source voltage of 100 V and a continuous drain current of 5.4 A at 25°C. The static drain-source on-resistance is specified at 39 mΩ maximum when measured at V_{GS} = 10 V and I_D = 3.2 A. Total gate charge is 37 nC, and the device is fully avalanche-rated with a single-pulse avalanche energy of 91 mJ. The operating junction temperature ranges from -55°C to 150°C, with a thermal resistance from junction to ambient of 50 °C/W.
IR MOSFET 100 V in a SO-8 package
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
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Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 1187308-IRF7490
Manufacturer Homepage: www.irf.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
| Infineon Technologies AG | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | IRF7490 | 1187308-IRF7490 |
| Product Name | N-Channel Power MOSFET | Electronic Surplus - IRF7490 |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.0390 ohms |
