Infineon Technologies AG 40V 10A MOSFET Transistor IRF7471PBF

MOSFET N-CH 40V 10A 8SO Product overview: IRF7471PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7471PBF can be used for catalog matching and distributor lookup.

N-Channel 40V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO

Manufacturer: Infineon Technologies
Win Source Part Number: 1187298-IRF7471PBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.5W
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Application Field: Used in Computers & Computer Peripherals, Power Management
Manufacturer Pack Quantity: 4,085
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 40V
Id - Continuous Drain Current: 10A
Rds On (Maximum) at Id, Vgs: 13mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 32nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2820pF at 20V