Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7379QTRPBF IRF7379QTRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046621-IRF7379QTRPB F Packaging: Cut Reel Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.5W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.8A, 4.3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 520pF @ 25V Maximum Rds On at Id,Vgs: 45 mOhm @ 5.8A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046621-IRF7379QTRPB F Packaging: Cut Reel Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.5W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.8A, 4.3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 520pF @ 25V Maximum Rds On at Id,Vgs: 45 mOhm @ 5.8A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7379QTRPBF - 1046621-IRF7379QTRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7379QTRPBF
1046621-IRF7379QTRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7379QTRPBF 1046621-IRF7379QTRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046621-IRF7379QTRPB F Packaging: Cut Reel Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.5W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.8A, 4.3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 520pF @ 25V Maximum Rds On at Id,Vgs: 45 mOhm @ 5.8A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046621-IRF7379QTRPBF
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.8A, 4.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 520pF @ 25V
Maximum Rds On at Id,Vgs: 45 mOhm @ 5.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
30V SOIC MOSFET Transistor - 289-IRF7379QTRPBF - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
30V SOIC MOSFET Transistor
289-IRF7379QTRPBF
30V SOIC MOSFET Transistor 289-IRF7379QTRPBF
MOSFET N/P-CH 30V 8-SOIC Product overview: IRF7379QTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7379QTRPBF can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 30V 8-SOIC Product overview: IRF7379QTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7379QTRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7379QTRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7379QTRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7379QTRPBF
MOSFET N/P-CH 30V 8-SOIC

MOSFET N/P-CH 30V 8-SOIC

Supplier's Site
FET, MOSFET Arrays - IRF7379QTRPBF - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF7379QTRPBF
FET, MOSFET Arrays IRF7379QTRPBF
MOSFET N/P-CH 30V 8-SOIC

MOSFET N/P-CH 30V 8-SOIC

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046621-IRF7379QTRPBF 289-IRF7379QTRPBF IRF7379QTRPBF IRF7379QTRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7379QTRPBF 30V SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays
Polarity P-Channel P-Channel; N and P-Channel
V(BR)DSS 30 volts 30 volts
PD 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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