Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7351PBF IRF7351PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1046619-IRF7351PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 4V @ 50μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1330pF @ 30V
Maximum Rds On at Id,Vgs: 17.8 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Mosfet Array 2 N-Channel (Dual) 60V 8A 2W Surface Mount 8-SO

MOSFET 2N-CH 60V 8A 8SO Product overview: IRF7351PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7351PBF can be used for catalog matching and distributor lookup.