Mosfet Array N and P-Channel 20V 5.2A, 4.3A 2W Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 109378-IRF7307TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.2A, 4.3A
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 20nC @ 4.5V
Max Input Capacitance: 660pF @ 15V
Maximum Rds On at Id,Vgs: 50 mOhm @ 2.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
MOSFET N/P-CH 20V 5.2A/4.3A 8SO Product overview: IRF7307TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.2A, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.2A, 4.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7307TRPBF can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 20V 5.2A/4.3A 8SO
MOSFET MOSFT DUAL N/PCh 20V 4.3A
POWER FIELD-EFFECT TRANSISTOR, 4.3A I(D), 20V, 0.05OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
MOSFET N/P-CH 20V 8-SOIC
MOSFET N/P-CH 20V 8-SOIC
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | ODG (Origin Data Global) | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF7307PBFTR-ND | 109378-IRF7307TRPBF | 289-IRF7307TRPBF | IRF7307TRPBF | IRF7307TRPBF | 66777162 | IRF7307TRPBF | 376-IRF7307TRPBF |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7307TRPBF | 20V 5.2A 4.3A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor | FET, MOSFET Arrays | MOSFET N/P-CH 20V 8-SOIC |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | Tape & Reel (TR) | 8-SOIC (0.154", 3.90mm Width) | ||||
| Polarity | P-Channel | P-Channel; N and P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| PD | 2000 milliwatts | 2000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
