Infineon Technologies AG 25V 29A MOSFET Transistor IRF6714MTR1PBF

MOSFET N-CH 25V 29A DIRECTFET Product overview: IRF6714MTR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6714MTR1PBF can be used for catalog matching and distributor lookup.

N-Channel 25V 29A (Ta), 166A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

Manufacturer: Infineon Technologies
Win Source Part Number: 731445-IRF6714MTR1PBF
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Package: DirectFET Isometric MX
Power Dissipation (Maximum): 2.8W, 89W
Popularity: Low
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 25V
Id - Continuous Drain Current: 29A, 166A
Rds On (Maximum) at Id, Vgs: 2.1mOhm at 29A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 44nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3890pF at 13V