MOSFET N-CH 25V 12A DIRECTFET Product overview: IRF6710S2TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6710S2TR1PBF can be used for catalog matching and distributor lookup.
N-Channel 25V 12A (Ta), 37A (Tc) 1.8W (Ta), 15W (Tc) Surface Mount DirectFET™ Isometric S1
Manufacturer: Infineon Technologies
Win Source Part Number: 101257-IRF6710S2TR1P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 15W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DIRECTFET S1
Dimension: DirectFET Isometric S1
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 12A (Ta), 37A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 25μA
Max Gate Charge: 13nC @ 4.5V
Max Input Capacitance: 1190pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.9 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): IRF6710S2TRPBF; NTMKB4893NT3G; NTMKB4893NT1G; IRF6710S2TR1PbF;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
MOSFET N-CH 25V 12A DIRECTFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF6710S2TR1PBF | IRF6710S2TR1PBFTR-ND | 101257-IRF6710S2TR1PBF | IRF6710S2TR1PBF |
| Product Name | 25V 12A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6710S2TR1PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 1800 milliwatts | 1800 to 15000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | Tape & Reel (TR) | DirectFET™ Isometric S1 | SOT3; DIRECTFET S1 | DirectFETTM Isometric S1 |
