Infineon Technologies AG Single FETs, MOSFETs IRF6678TR1

Description
N-Channel 30V 30A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
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Description
N-Channel 30V 30A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
Request a Quote Datasheet

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Single FETs, MOSFETs - IRF6678TR1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6678TR1TR-ND
Single FETs, MOSFETs IRF6678TR1TR-ND
N-Channel 30V 30A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

N-Channel 30V 30A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6678TR1 - 109098-IRF6678TR1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6678TR1
109098-IRF6678TR1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6678TR1 109098-IRF6678TR1
Manufacturer: Infineon Technologies Win Source Part Number: 109098-IRF6678TR1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Ta), 150A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 65nC @ 4.5V Max Input Capacitance: 5640pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 109098-IRF6678TR1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Ta), 150A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 250μA
Max Gate Charge: 65nC @ 4.5V
Max Input Capacitance: 5640pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6678TR1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6678TR1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6678TR1
MOSFET N-CH 30V 30A DIRECTFET

MOSFET N-CH 30V 30A DIRECTFET

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF6678TR1TR-ND 109098-IRF6678TR1 IRF6678TR1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6678TR1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type DirectFET™ Isometric MX SOT3; DIRECTFET MX DirectFETTM Isometric MX
V(BR)DSS 30 volts
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