N-Channel 30V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
Manufacturer: Infineon Technologies
Win Source Part Number: 017470-IRF6635TRPBF
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: HEXFET
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -40°C ~ 150°C (TJ)
Package: DirectFET Isometric MX
Manufacturer Device Package: DIRECTFET MX
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 250μA
Gate Charge (Qg) @ Vgs: 71nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 5970pF @ 15V
Power - Max: 2.8W
Family Name: IRF6635
Alternative Parts (Cross-Reference): IRF6635TR1PBF; IRF6635; IRF6635TR1; IRF6635PbF;
Introduction Date: May 03, 2006
ECCN: EAR99
Country of Origin: Mexico, Philippines
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 32A DIRECTFET Product overview: IRF6635TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6635TRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 32A DIRECTFET
MOSFET N-CH 30V 32A DIRECTFET
MOSFET N-CH 30V 32A DIRECTFET
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF6635TRPBFTR-ND | 017470-IRF6635TRPBF | 278-IRF6635TRPBF | IRF6635TRPBF | IRF6635TRPBF | 376-IRF6635TRPBF |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products | 30V 32A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET N-CH 30V 32A DIRECTFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | DirectFET™ Isometric MX | SOT3 | Tape & Reel (TR) | DirectFETTM Isometric MX | DirectFET™ Isometric MX | |
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ||
| Packing Method | Tape Reel; Reel(TR) | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) | ||
| PD | 2800 milliwatts | 2800 milliwatts | 89000 milliwatts |
