Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6629TRPBF IRF6629TRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 112800-IRF6629TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 29A (Ta), 180A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 100μA
Max Gate Charge: 51nC @ 4.5V
Max Input Capacitance: 4260pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.1 mOhm @ 29A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 4,800

MOSFET N-CH 25V 29A DIRECTFET Product overview: IRF6629TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6629TRPBF can be used for catalog matching and distributor lookup.

N-Channel 25V 29A (Ta), 180A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX