MOSFET N-CH 20V 30A DIRECTFET Product overview: IRF6619TR1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6619TR1 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017466-IRF6619TR1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 30A (Ta), 150A (Tc)
Gate-Source Threshold Voltage: 2.45V @ 250μA
Max Gate Charge: 57nC @ 4.5V
Max Input Capacitance: 5040pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
N-Channel 20V 30A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
N-Channel 20V 30A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
MOSFET N-CH 20V 30A DIRECTFET
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MOSFET N-CH 20V 30A DIRECTFET
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Utmel Electronic Limited | Karl Kruse GmbH & Co. KG | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF6619TR1 | 017466-IRF6619TR1 | IRF6619TR1TR-ND | 376-IRF6619TR1 | IRF6619TR1 | IRF6619TR1 |
| Product Name | 20V 30A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6619TR1 | Single FETs, MOSFETs | MOSFET N-CH 20V 30A DIRECTFET | MOSFET N-CH 20V 30A DIRECTFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 2800 milliwatts | 2800 to 89000 milliwatts | 2800 milliwatts | |||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | |||
| Package Type | Tape & Reel (TR) | SOT3; DIRECTFET MX | DirectFET™ Isometric MX | DirectFETTM Isometric MX | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT) |
