Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6612TR1PBF IRF6612TR1PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 118278-IRF6612TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Ta), 136A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 45nC @ 4.5V Max Input Capacitance: 3970pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6612TR1PBF - 118278-IRF6612TR1PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF6612TR1PBFTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6612TR1PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 118278-IRF6612TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Ta), 136A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 45nC @ 4.5V Max Input Capacitance: 3970pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6612TR1PBF - 118278-IRF6612TR1PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6612TR1PBF
118278-IRF6612TR1PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6612TR1PBF 118278-IRF6612TR1PBF
Manufacturer: Infineon Technologies Win Source Part Number: 118278-IRF6612TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Ta), 136A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 45nC @ 4.5V Max Input Capacitance: 3970pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 118278-IRF6612TR1PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 24A (Ta), 136A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 250μA
Max Gate Charge: 45nC @ 4.5V
Max Input Capacitance: 3970pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 24A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF6612TR1PBFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6612TR1PBFTR-ND
Single FETs, MOSFETs IRF6612TR1PBFTR-ND
N-Channel 30V 24A (Ta), 136A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

N-Channel 30V 24A (Ta), 136A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6612TR1PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6612TR1PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6612TR1PBF
MOSFET N-CH 30V 24A DIRECTFET

MOSFET N-CH 30V 24A DIRECTFET

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 118278-IRF6612TR1PBF IRF6612TR1PBFTR-ND IRF6612TR1PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6612TR1PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2800 to 89000 milliwatts
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