Infineon Technologies AG Channel Type Infineon IRF640NSTRLPBF.

The IRF640N series is a fifth-generation HEXFET® power MOSFET designed for efficient and reliable switching in commercial-industrial applications. It features a 200V drain-to-source breakdown voltage, a continuous drain current of 18A at 25°C, and a maximum on-resistance of 0.15Ω at 10V gate drive. The device supports a maximum junction temperature of 175°C and is fully avalanche rated with a single pulse avalanche energy of 247 mJ. Available in TO-220AB, D2Pak, and TO-262 packages, the D2Pak variant is a surface-mount option with low thermal resistance and high current capability. The part includes integrated body diode characteristics with a forward voltage up to 1.3V and reverse recovery time up to 251ns. Thermal resistance is specified at 1.0°C/W junction-to-case and 62°C/W junction-to-ambient in free air. The gate threshold voltage ranges from 2.0V to 4.0V, with total gate charge up to 67nC. Package and mounting configurations accommodate both through-hole and surface-mount designs.