Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6215L IRF6215L

Manufacturer: Infineon Technologies
Win Source Part Number: 133912-IRF6215L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 860pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 290 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262

MOSFET P-CH 150V 13A TO262 Product overview: IRF6215L from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6215L can be used for catalog matching and distributor lookup.