Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5850 IRF5850

Manufacturer: Infineon Technologies
Win Source Part Number: 115193-IRF5850
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 6-TSOP
Maximum Power Dissipation: 960mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.2A
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 5.4nC @ 4.5V
Max Input Capacitance: 320pF @ 15V
Maximum Rds On at Id,Vgs: 135 mOhm @ 2.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 100

Mosfet Array 2 P-Channel (Dual) 20V 2.2A 960mW Surface Mount 6-TSOP

MOSFET 2P-CH 20V 2.2A 6TSOP Product overview: IRF5850 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF5850 can be used for catalog matching and distributor lookup.