Infineon Technologies AG FETs - Single - IRF5803TR IRF5803TR

Description
Manufacturer: Infineon Technologies Win Source Part Number: 710485-IRF5803TR Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: Micro6(TSOP-6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: SOT-23-6 Thin, TSOT-23-6 Power Dissipation (Maximum): 2W Popularity: Low Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 40V Id - Continuous Drain Current: 3.4A Rds On (Maximum) at Id, Vgs: 112mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 37nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1110pF at 25V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 710485-IRF5803TR Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: Micro6(TSOP-6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: SOT-23-6 Thin, TSOT-23-6 Power Dissipation (Maximum): 2W Popularity: Low Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 40V Id - Continuous Drain Current: 3.4A Rds On (Maximum) at Id, Vgs: 112mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 37nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1110pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF5803TR - 710485-IRF5803TR - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF5803TR
710485-IRF5803TR
FETs - Single - IRF5803TR 710485-IRF5803TR
Manufacturer: Infineon Technologies Win Source Part Number: 710485-IRF5803TR Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: Micro6(TSOP-6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: SOT-23-6 Thin, TSOT-23-6 Power Dissipation (Maximum): 2W Popularity: Low Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 40V Id - Continuous Drain Current: 3.4A Rds On (Maximum) at Id, Vgs: 112mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 37nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1110pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 710485-IRF5803TR
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: Micro6(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Maximum): 2W
Popularity: Low
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 40V
Id - Continuous Drain Current: 3.4A
Rds On (Maximum) at Id, Vgs: 112mOhm at 3.4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 37nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1110pF at 25V

Buy Now
Single FETs, MOSFETs - IRF5803TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF5803TR-ND
Single FETs, MOSFETs IRF5803TR-ND
P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)

P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)

Buy Now Datasheet
Singapore, Singapore
40V 3.4A MOSFET Transistor
278-IRF5803TR
40V 3.4A MOSFET Transistor 278-IRF5803TR
MOSFET P-CH 40V 3.4A MICRO6 Product overview: IRF5803TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 3.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5803TR can be used for catalog matching and distributor lookup.

MOSFET P-CH 40V 3.4A MICRO6 Product overview: IRF5803TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 3.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5803TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF5803TR - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF5803TR
Single FETs, MOSFETs IRF5803TR
MOSFET P-CH 40V 3.4A MICRO6

MOSFET P-CH 40V 3.4A MICRO6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF5803TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF5803TR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF5803TR
MOSFET P-CH 40V 3.4A MICRO6

MOSFET P-CH 40V 3.4A MICRO6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 710485-IRF5803TR IRF5803TR-ND 278-IRF5803TR IRF5803TR IRF5803TR
Product Name FETs - Single - IRF5803TR Single FETs, MOSFETs 40V 3.4A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 40 volts 40 volts
PD 2000 milliwatts 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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