Infineon Technologies AG Single FETs, MOSFETs IRF5803D2TRPBF

Description
MOSFET P-CH 40V 3.4A 8SO
Request a Quote Datasheet
Description
MOSFET P-CH 40V 3.4A 8SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF5803D2TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF5803D2TRPBF
Single FETs, MOSFETs IRF5803D2TRPBF
MOSFET P-CH 40V 3.4A 8SO

MOSFET P-CH 40V 3.4A 8SO

Supplier's Site
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5803D2TRPBF
099834-IRF5803D2TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5803D2TRPBF 099834-IRF5803D2TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 099834-IRF5803D2TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Family Name: IRF5803D2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 3.4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 37nC @ 10V Max Input Capacitance: 1110pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 112 mOhm @ 3.4A, 10V Alternative Parts (Cross-Reference): IRF5803D2TR; IRF5803D2; IRF5803D2PbF; Introduction Date: March 05, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient Quantity per package: 4k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 099834-IRF5803D2TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Family Name: IRF5803D2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 1110pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 112 mOhm @ 3.4A, 10V
Alternative Parts (Cross-Reference): IRF5803D2TR; IRF5803D2; IRF5803D2PbF;
Introduction Date: March 05, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
Quantity per package: 4k pcs

Buy Now Datasheet
Single FETs, MOSFETs - IRF5803D2TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF5803D2TRPBFTR-ND
Single FETs, MOSFETs IRF5803D2TRPBFTR-ND
P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO

P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO

Buy Now Datasheet
40V 3.4A MOSFET Transistor - 278-IRF5803D2TRPBF - ERSAELECTRONICS PTE. LTD.
Singapore
40V 3.4A MOSFET Transistor
278-IRF5803D2TRPBF
40V 3.4A MOSFET Transistor 278-IRF5803D2TRPBF
MOSFET P-CH 40V 3.4A 8SO Product overview: IRF5803D2TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 3.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5803D2TRPBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 40V 3.4A 8SO Product overview: IRF5803D2TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 3.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5803D2TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF5803D2TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF5803D2TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF5803D2TRPBF
MOSFET P-CH 40V 3.4A 8SO

MOSFET P-CH 40V 3.4A 8SO

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF5803D2TRPBF 099834-IRF5803D2TRPBF IRF5803D2TRPBFTR-ND 278-IRF5803D2TRPBF IRF5803D2TRPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5803D2TRPBF Single FETs, MOSFETs 40V 3.4A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts
IDSS 3400 milliamps
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8 suppliers