Infineon Technologies AG Single FETs, MOSFETs IRF5803D2

P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO

MOSFET P-CH 40V 3.4A 8SO

MOSFET P-CH 40V 3.4A 8SO Product overview: IRF5803D2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 3.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5803D2 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 121865-IRF5803D2
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 1110pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 112 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance