Manufacturer: Infineon Technologies
Win Source Part Number: 017438-IRF540NSTRRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 1960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 44 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 33A D2PAK Product overview: IRF540NSTRRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF540NSTRRPBF can be used for catalog matching and distributor lookup.
N-Channel 100V 33A (Tc) 130W (Tc) Surface Mount D2PAK
MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC
POWER FIELD-EFFECT TRANSISTOR, 33A I(D), 100V, 0.044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, D2PAK-3. FREE 2 YEAR RADWELL WARRANTY
Integrated Circuits (ICs) - Transistors - MOSFETs
MOSFET N-CH 100V 33A D2PAK
N CHANNEL MOSFET, 100V, 6.5A D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | Radwell International | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017438-IRF540NSTRRPBF | 278-IRF540NSTRRPBF | 8312840 | IRF540NSTRRPBFTR-ND | IRF540NSTRRPBF | 66776950 | IRF540NSTRRPBF | IRF540NSTRRPBF | 19K8212 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540NSTRRPBF | 100V 33A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | MOSFET | Transistor | Integrated Circuits (ICs) - Transistors - MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 100V, 6.5A D2-Pak; Channel Type Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | |||||||
| PD | 130000 milliwatts | 3.8 milliwatts | 130000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-263; SOT3; D2PAK | Tape & Reel (TR) | TO-263; D2pak (to-263) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 |
