MOSFET P-CH 55V 31A TO220AB Product overview: IRF5305PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5305PBF can be used for catalog matching and distributor lookup.
P-Channel 55V 31A (Tc) 110W (Tc) Through Hole TO-220AB
MOSFET P-CH 55V 31A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 017435-IRF5305PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: IRF5305
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): IRF5305L; IRF5305LPBF; IRF5305STRL;
Introduction Date: October 31, 2003
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
P CHANNEL MOSFET, CONTINUOUS DRAIN CURRENT ID:- 31 AMP, DRAIN SOURCE VOLTAGE VDS: -55V, ON RESISTANCE RDS(ON): 0.06OHM, RDS(ON) TEST VOLTAGE VGS: -10V, THRESHOLD VOLTAGE VGS:-4V, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH 55V 31A TO-220AB
MOSFET P-CH 55V 31A TO220AB
P CHANNEL MOSFET, -55V, 31A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
55V 31A 60mΩ@10V,16A 110W 4V@250uA P Channel TO-220-3 MOSFETs ROHS
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;TO-220AB;PD 110W;VGS +/-20V
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | Radwell International | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF5305PBF | IRF5305PBF-ND | 5411736 | IRF5305PBF | 017435-IRF5305PBF | 66776910 | 376-IRF5305PBF | IRF5305PBF | 63J7317 | IRF5305PBF | 70016962 |
| Product Name | 55V 31A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5305PBF | Transistor | MOSFET P-CH 55V 31A TO-220AB | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -55V, 31A, To-220Ab; Channel Type Infineon | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;TO-220AB;PD 110W;VGS +/-20V |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | -55 volts | 55 volts | -55 volts | |||||
| Transconductance | 0.0080 kS | 0.0080 kS | |||||||||
| PD | 110 milliwatts | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts |
