Infineon Technologies AG Single FETs, MOSFETs IRF3710ZSTRRPBF

Description
N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - IRF3710ZSTRRPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3710ZSTRRPBF-ND
Single FETs, MOSFETs IRF3710ZSTRRPBF-ND
N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3710ZSTRRPBF - 1046484-IRF3710ZSTRRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3710ZSTRRPBF
1046484-IRF3710ZSTRRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3710ZSTRRPBF 1046484-IRF3710ZSTRRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046484-IRF3710ZSTRR PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 2900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046484-IRF3710ZSTRRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF3710ZSTRRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF3710ZSTRRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF3710ZSTRRPBF
MOSFET N-CH 100V 59A D2PAK

MOSFET N-CH 100V 59A D2PAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF3710ZSTRRPBF-ND 1046484-IRF3710ZSTRRPBF IRF3710ZSTRRPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3710ZSTRRPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 100 volts
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