The IRF3205ZSPbF is a HEXFET® power MOSFET designed for high-efficiency switching applications. It is housed in a D2Pak package and features a continuous drain current of 75 A at TC = 25°C, a drain-to-source voltage rating of 55 V, and an ultra-low on-resistance of 6.5 mΩ at VGS = 10 V. The device supports a 175°C junction operating temperature and repetitive avalanche energy up to Tjmax. It meets RoHS standards and is qualified for industrial applications. The D2Pak package is intended for surface mount assembly on a 1" square PCB (FR-4 or G-10 material).
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:75A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:170W; No. of Pins:3Pins RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 32AC0747 |
| Product Name | Channel Type Infineon |
| Package Type | TO-3 |
