Infineon Technologies AG High Reliability - Defense - Power - HiRel power ICs - IR2113E6 IR2113E6

The IR2113E6 is a high-voltage, high-speed gate driver for N-channel MOSFETs and IGBTs, supporting high-side operation up to 600 V with bootstrap functionality. It is packaged in a leadless chip carrier (LCC-18) measuring 0.45 g in weight. The device features independent high and low-side drivers with a gate supply range of 10 to 20 V and a separate logic supply range of 5 to 20 V. Propagation delays are matched within 20 ns, and both channels include undervoltage lockout. The input logic is CMOS and Schmitt-triggered with pull-down resistors, and the outputs are in phase with the inputs. It meets AEC-Q200 qualification and is rated for junction temperatures from -55 °C to 125 °C, with a maximum power dissipation of 1.6 W and thermal resistance of 125 °C/W.