MOSFET N-CH 700V 10.1A TO251-3 Product overview: IPS65R650CEAKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 10.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 10.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS65R650CEAKMA1
N-Channel 700V 10.1A (Tc) 86W (Tc) Through Hole PG-TO251-3
650V-700V CoolMOS N-Channel Power MOSFET
MOSFET N-CH 700V 10.1A TO251-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPS65R650CEAKMA1 | IPS65R650CEAKMA1-ND | IPS65R650CEAKMA1 | IPS65R650CEAKMA1 | IPS65R650CEAKMA1 |
| Product Name | 700V 10.1A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 650 volts | ||||
| PD | 86000 milliwatts | ||||
| TJ | -40 to 150 C (-40 to 302 F) |