Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPS65R1K5CE

Description
CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V, 650 V and 700 V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. Summary of Features Narrow margins between typical and max RDS(on) Reduced energy stored in output capacitance (Eoss) Good body diode ruggedness and reduced reverse recovery charge (Qrr) Optimized integrated Rg Benefits Low conduction losses Low switching losses Suitable for hard and soft switching Easy controllable switching behavior Improved efficiencyand consequent reduction of power consumption Less design in effort Easy to use Potential Applications Laptop and notebook adapter Low power charger Lighting LCD and LED TV
  • 500V-950V N-Channel Power MOSFET - IPS65R1K5CE - Infineon Technologies AG
    Infineon Technologies AG
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Description
CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V, 650 V and 700 V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. Summary of Features Narrow margins between typical and max RDS(on) Reduced energy stored in output capacitance (Eoss) Good body diode ruggedness and reduced reverse recovery charge (Qrr) Optimized integrated Rg Benefits Low conduction losses Low switching losses Suitable for hard and soft switching Easy controllable switching behavior Improved efficiencyand consequent reduction of power consumption Less design in effort Easy to use Potential Applications Laptop and notebook adapter Low power charger Lighting LCD and LED TV
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Datasheet
Datasheet Summary
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The IPS65R1K5CE is a 650V CoolMOS™ CE power MOSFET designed for cost-sensitive consumer and lighting applications, featuring low losses due to a low figure of merit (Rds(on)*Qg) and high commutation ruggedness. It is packaged in a PG-TO-251 case with dimensions of 6.22mm maximum length, 6.73mm maximum width, and 3.60mm maximum height. The device has a maximum continuous drain current of 5.2A at Tc=25°C, a drain-source on-state resistance of 1500mΩ maximum at Tj=25°C, and a total gate charge of 10.5nC typical. It is qualified for standard grade applications and complies with Pb-free plating and halogen-free mold compound requirements.

Datasheet Summary
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The IPS65R1K5CE is a 650V CoolMOS™ CE power MOSFET designed for cost-sensitive consumer and lighting applications, featuring low losses due to a low figure of merit (Rds(on)*Qg) and high commutation ruggedness. It is packaged in a PG-TO-251 case with dimensions of 6.22mm maximum length, 6.73mm maximum width, and 3.60mm maximum height. The device has a maximum continuous drain current of 5.2A at Tc=25°C, a drain-source on-state resistance of 1500mΩ maximum at Tj=25°C, and a total gate charge of 10.5nC typical. It is qualified for standard grade applications and complies with Pb-free plating and halogen-free mold compound requirements.

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500V-950V N-Channel Power MOSFET - IPS65R1K5CE - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPS65R1K5CE
500V-950V N-Channel Power MOSFET IPS65R1K5CE
CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V, 650 V and 700 V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. Summary of Features Narrow margins between typical and max RDS(on) Reduced energy stored in output capacitance (Eoss) Good body diode ruggedness and reduced reverse recovery charge (Qrr) Optimized integrated Rg Benefits Low conduction losses Low switching losses Suitable for hard and soft switching Easy controllable switching behavior Improved efficiencyand consequent reduction of power consumption Less design in effort Easy to use Potential Applications Laptop and notebook adapter Low power charger Lighting LCD and LED TV

CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V, 650 V and 700 V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Summary of Features

  • Narrow margins between typical and max RDS(on)
  • Reduced energy stored in output capacitance (Eoss)
  • Good body diode ruggedness and reduced reverse recovery charge (Qrr)
  • Optimized integrated Rg

Benefits

  • Low conduction losses
  • Low switching losses
  • Suitable for hard and soft switching
  • Easy controllable switching behavior
  • Improved efficiencyand consequent reduction of power consumption
  • Less design in effort
  • Easy to use

Potential Applications

  • Laptop and notebook adapter
  • Low power charger
  • Lighting
  • LCD and LED TV
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPS65R1K5CE
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 1.5 ohms
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