Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPS65R1K0CE

Description
CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V, 650 V and 700 V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. Summary of Features Narrow margins between typical and max RDS(on) Reduced energy stored in output capacitance (Eoss) Good body diode ruggedness and reduced reverse recovery charge (Qrr) Optimized integrated Rg Benefits Low conduction losses Low switching losses Suitable for hard and soft switching Easy controllable switching behavior Improved efficiencyand consequent reduction of power consumption Less design in effort Easy to use Potential Applications Laptop and notebook adapter Low power charger Lighting LCD and LED TV
  • 500V-950V N-Channel Power MOSFET - IPS65R1K0CE - Infineon Technologies AG
    Infineon Technologies AG
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Description
CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V, 650 V and 700 V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. Summary of Features Narrow margins between typical and max RDS(on) Reduced energy stored in output capacitance (Eoss) Good body diode ruggedness and reduced reverse recovery charge (Qrr) Optimized integrated Rg Benefits Low conduction losses Low switching losses Suitable for hard and soft switching Easy controllable switching behavior Improved efficiencyand consequent reduction of power consumption Less design in effort Easy to use Potential Applications Laptop and notebook adapter Low power charger Lighting LCD and LED TV
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Datasheet
Datasheet Summary
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The IPS65R1K0CE is a 650V CoolMOS™ CE power MOSFET designed for cost-sensitive consumer and lighting applications, featuring low conduction and switching losses. It is packaged in a PG-TO251-3 case with a maximum continuous drain current of 6.7A at 150°C and a pulsed drain current of 12A. The device has a maximum on-state resistance of 1000mΩ, a gate charge of 15.3nC, and an output energy of 1.5µJ at 400V. It is qualified for standard grade applications and supports high dv/dt ruggedness up to 50V/ns. The MOSFET is suitable for applications including adapters, LCD and PDP TVs, and indoor lighting.

Datasheet Summary
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The IPS65R1K0CE is a 650V CoolMOS™ CE power MOSFET designed for cost-sensitive consumer and lighting applications, featuring low conduction and switching losses. It is packaged in a PG-TO251-3 case with a maximum continuous drain current of 6.7A at 150°C and a pulsed drain current of 12A. The device has a maximum on-state resistance of 1000mΩ, a gate charge of 15.3nC, and an output energy of 1.5µJ at 400V. It is qualified for standard grade applications and supports high dv/dt ruggedness up to 50V/ns. The MOSFET is suitable for applications including adapters, LCD and PDP TVs, and indoor lighting.

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500V-950V N-Channel Power MOSFET - IPS65R1K0CE - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPS65R1K0CE
500V-950V N-Channel Power MOSFET IPS65R1K0CE
CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V, 650 V and 700 V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. Summary of Features Narrow margins between typical and max RDS(on) Reduced energy stored in output capacitance (Eoss) Good body diode ruggedness and reduced reverse recovery charge (Qrr) Optimized integrated Rg Benefits Low conduction losses Low switching losses Suitable for hard and soft switching Easy controllable switching behavior Improved efficiencyand consequent reduction of power consumption Less design in effort Easy to use Potential Applications Laptop and notebook adapter Low power charger Lighting LCD and LED TV

CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V, 650 V and 700 V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Summary of Features

  • Narrow margins between typical and max RDS(on)
  • Reduced energy stored in output capacitance (Eoss)
  • Good body diode ruggedness and reduced reverse recovery charge (Qrr)
  • Optimized integrated Rg

Benefits

  • Low conduction losses
  • Low switching losses
  • Suitable for hard and soft switching
  • Easy controllable switching behavior
  • Improved efficiencyand consequent reduction of power consumption
  • Less design in effort
  • Easy to use

Potential Applications

  • Laptop and notebook adapter
  • Low power charger
  • Lighting
  • LCD and LED TV
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPS65R1K0CE
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 1 ohms
QG 15.3 nC
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