Power Field-Effect Transistor
N-Channel 650V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3
MOSFET N-CH 650V 16A TO251-3
MOSFET N-CH 650V 16A TO251-3
MOSFET, N-CH, 600V, 16A, TO-251 ROHS COMPLIANT: YES
| Rochester Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPS60R210PFD7SAKMA1 | 448-IPS60R210PFD7SAKMA1-ND | IPS60R210PFD7SAKMA1 | IPS60R210PFD7SAKMA1 | 92AH8420 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 16A, To-251 Rohs Compliant Infineon | |
| Package Type | PG-TO251-3 | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 |
| Packing Method | Tube; Tube | Tube; Tube | |||
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
