Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC65R125CFD7A IPQC65R125CFD7A

Description
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in in HDSOP-22 bottom-side cooling The 125mΩ IPQC65R125CFD7A in QDPAK bottom side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Bottom side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles
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Description
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in in HDSOP-22 bottom-side cooling The 125mΩ IPQC65R125CFD7A in QDPAK bottom side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Bottom side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles
Request a Quote
Datasheet
Datasheet Summary
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The IPQC65R125CFD7A is a 650 V automotive-qualified N-channel MOSFET with an integrated fast body diode, designed for PFC and resonant switching topologies such as ZVS phase-shift full-bridge and LLC. It is packaged in a PG-HDSOP-22 surface-mount case with dimensions of 15.50 mm × 15.10 mm and features a Kelvin source pin for improved controllability. The device has a maximum drain-source on-state resistance of 125 mΩ, a pulsed drain current of 66 A, and a gate charge of 32 nC. It is qualified to AEC-Q101 and supports an operating junction temperature range from -40 °C to 150 °C.

Datasheet Summary
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The IPQC65R125CFD7A is a 650 V automotive-qualified N-channel MOSFET with an integrated fast body diode, designed for PFC and resonant switching topologies such as ZVS phase-shift full-bridge and LLC. It is packaged in a PG-HDSOP-22 surface-mount case with dimensions of 15.50 mm × 15.10 mm and features a Kelvin source pin for improved controllability. The device has a maximum drain-source on-state resistance of 125 mΩ, a pulsed drain current of 66 A, and a gate charge of 32 nC. It is qualified to AEC-Q101 and supports an operating junction temperature range from -40 °C to 150 °C.

Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC65R125CFD7A - IPQC65R125CFD7A - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC65R125CFD7A
IPQC65R125CFD7A
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC65R125CFD7A IPQC65R125CFD7A
650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in in HDSOP-22 bottom-side cooling The 125mΩ IPQC65R125CFD7A in QDPAK bottom side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Bottom side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and 3.2mm creepage distance. Summary of Features AEC-Q101 qualified For hard- and soft-switching topologies Intrinsic fast body diode Reduced parasitic source inductance Kelvin source pin High current capability Creepage distance of 3.2 mm for HV Benefits Better utilization of PCB space Highest reliability for automotive appl. Optimized power loop Decoupling of thermals from substrate Enabling of higher power density designs Scalable for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers HV-LV DC-DC converters Auxiliary power supplies Applications AC-DC auxiliary power supplies High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles

650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in in HDSOP-22 bottom-side cooling

The 125mΩ IPQC65R125CFD7A in QDPAK bottom side cooling SMD package is part of the automotive-qualified 650 V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Bottom side cooling further supports increased power density, reduces parasitic source inductance and comes with Kelvin source pin and
3.2mm creepage distance.


Summary of Features

  • AEC-Q101 qualified
  • For hard- and soft-switching topologies
  • Intrinsic fast body diode
  • Reduced parasitic source inductance
  • Kelvin source pin
  • High current capability
  • Creepage distance of 3.2 mm for HV

Benefits

  • Better utilization of PCB space
  • Highest reliability for automotive appl.
  • Optimized power loop
  • Decoupling of thermals from substrate
  • Enabling of higher power density designs
  • Scalable for use in PFC and DC-DC stage
  • Granular portfolio available

Potential Applications

  • On-board chargers
  • HV-LV DC-DC converters
  • Auxiliary power supplies

Applications

  • AC-DC auxiliary power supplies
  • High-voltage DC-DC converter for electric vehicles
  • On-board charging (OBC) for electric vehicles
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPQC65R125CFD7A
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IPQC65R125CFD7A
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 3.5 to 4.5 volts
rDS(on) 0.1250 ohms
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