Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPQC60T017S7 IPQC60T017S7

600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor in Q-DPAK BSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy The CoolMOS™ S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS. The temperature sensor enhances CoolMOS™ S7 features, allowing the best possible utilization of the power transistor. Summary of Features Optimized price performance Tailored for low-frequency switching Reduced parasitic source inductance Seamless diagnostics Accurate and fast monitoring over time High current capability Enhanced protection Optimized thermal device utilization Cutting-edge top-side-cooled package Benefits Minimized conduction losses Increased system performances Allow more compact design over EMR Lower TCO over prolonged time Enabling higher power density designs Reduction of external sensing elements Best utilization of power transistor 40% more accurate than discrete sensor 4x faster than discrete sensor solution Optimal PCB space utilization Enabling functional safety Best-in-class thermal dissipation Potential Applications Solid state relay (SSR) Solid state circuit breaker (SSCB) Motor soft starter Power distribution unit (AC/DC)