Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPQC60R017S7 IPQC60R017S7

Description
Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device. Summary of Features Compact bottom-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Eliminates or reduces heat sinks in solid-state design Lower TCO cost or BOM cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning
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Description
Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device. Summary of Features Compact bottom-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Eliminates or reduces heat sinks in solid-state design Lower TCO cost or BOM cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPQC60R017S7 - IPQC60R017S7 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPQC60R017S7
IPQC60R017S7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPQC60R017S7 IPQC60R017S7
Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device. Summary of Features Compact bottom-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Eliminates or reduces heat sinks in solid-state design Lower TCO cost or BOM cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning

Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device

The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device.


Summary of Features

  • Compact bottom-side-cooled QDPAK package
  • Optimized for conduction performance
  • Improved thermal resistance
  • High pulse current capability
  • Kelvin-source pin improves switching performance at high current

Benefits

  • Minimizes conduction losses
  • Increases energy efficiency
  • More compact and easier designs
  • Eliminates or reduces heat sinks in solid-state design
  • Lower TCO cost or BOM cost

Potential Applications

  • SMPS
  • Solar energy systems
  • Battery and equipment protection
  • Solid state relays (SSR) and solid state circuit breakers (SSCB)
  • Indoor commercial lighting control
  • UPS
  • Low speed electric vehicles (LSEV)
  • Programmable logic controllers (PLC)
  • Room air conditioning
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPQC60R017S7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPQC60R017S7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0170 ohms
QG 196 nC
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