The IPQC60R010S7A is a 600 V silicon superjunction MOSFET designed for high-current, low-frequency switching applications such as circuit breakers and synchronous rectification. It is packaged in the QDPAK (PG-HDSOP-22) surface-mount package with a footprint of 315 mm² and features a Kelvin source pin to reduce parasitic inductance and improve high-current switching stability. The device has a maximum drain-source on-resistance of 10 mΩ at 25°C, a pulsed drain current of 801 A, and a continuous drain current rating of 50 A limited by junction temperature. It is qualified to AEC-Q101 and compliant with MSL1 soldering standards, enabling use in automotive and industrial environments. Thermal resistance from junction to case is 0.18 °C/W, and the operating junction temperature range extends to 175 °C for short durations.
Infineon’s lowest RDS(on)* A SJ MOSFET in the novel bottom-side-cooled QDPAK package, ideal for low-frequency switching automotive applications
The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET family is optimized to offer low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for HV solid state power distribution applications (HV eFuse, Solid State Circuit breaker) and active line rectification. The QDPAK-BSC package provides the intrinsic superior thermal and overload capabilities while enabling customers to utilize standardized SMD cooling and mounting techniques.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPQC60R010S7A |
| Product Name | Power - MOSFET (Si/SiC) - Automotive MOSFET - 600V-800V N-Channel Automotive MOSFET - 600 V CoolMOS™ S7A / S7TA - IPQC60R010S7A |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| VGS(off) | 3.5 to 4.5 volts |
| rDS(on) | 0.0100 ohms |
