Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel 55V 80A (Tc) 250W (Tc) Through Hole PG-TO220-3-1
MOSFET N-CH 55V 80A TO220-3
| Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors |
| Product Number | IPP80N06S207AKSA1 | IPP80N06S207AKSA1-ND | IPP80N06S207AKSA1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel |
