Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP65R225C7

Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications EV charging Light electric vehicles (LEV) Uninterruptible power supplies (UPS) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with IKZ75N65EH5 | IGBT discretes 1EDB6275F | Gate driver ICs IKZ75N65EH5 | IGBT discretes 1EDB6275F | Gate driver ICs IKZ75N65EH5 | IGBT discretes 1EDB6275F | Gate driver ICs
  • 500V-950V N-Channel Power MOSFET - IPP65R225C7 - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote Datasheet
Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications EV charging Light electric vehicles (LEV) Uninterruptible power supplies (UPS) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with IKZ75N65EH5 | IGBT discretes 1EDB6275F | Gate driver ICs IKZ75N65EH5 | IGBT discretes 1EDB6275F | Gate driver ICs IKZ75N65EH5 | IGBT discretes 1EDB6275F | Gate driver ICs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPP65R225C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP65R225C7
500V-950V N-Channel Power MOSFET IPP65R225C7
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications EV charging Light electric vehicles (LEV) Uninterruptible power supplies (UPS) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with IKZ75N65EH5 | IGBT discretes 1EDB6275F | Gate driver ICs IKZ75N65EH5 | IGBT discretes 1EDB6275F | Gate driver ICs IKZ75N65EH5 | IGBT discretes 1EDB6275F | Gate driver ICs

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.


Summary of Features

  • 650V voltage
  • Revolutionary best-in-class R DS(on)/package
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Qg
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology

Benefits

  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power

Applications

  • EV charging
  • Light electric vehicles (LEV)
  • Uninterruptible power supplies (UPS)

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • IKZ75N65EH5 |
    IGBT discretes
  • 1EDB6275F |
    Gate driver ICs
  • IKZ75N65EH5 |
    IGBT discretes
  • 1EDB6275F |
    Gate driver ICs
  • IKZ75N65EH5 |
    IGBT discretes
  • 1EDB6275F |
    Gate driver ICs
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
650V 225mOhm MOSFET Transistor
2088-IPP65R225C7
650V 225mOhm MOSFET Transistor 2088-IPP65R225C7
MOSFETs 650V CoolMOS C7 Power Trans; 225mOhm Product overview: IPP65R225C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 225mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 225mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP65R225C7 can be used for catalog matching and distributor lookup.

MOSFETs 650V CoolMOS C7 Power Trans; 225mOhm Product overview: IPP65R225C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 225mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 225mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP65R225C7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPP65R225C7
MOSFET IPP65R225C7
MOSFET 650V CoolMOS C7 Power Trans; 225mOhm

MOSFET 650V CoolMOS C7 Power Trans; 225mOhm

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP65R225C7 2088-IPP65R225C7 IPP65R225C7
Product Name 500V-950V N-Channel Power MOSFET 650V 225mOhm MOSFET Transistor MOSFET
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.2250 ohms
QG 20 nC
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data