Infineon Technologies AG 650V 14A TO220 MOSFET Transistor IPP65R190CFD7AAKSA1

MOSFET N-CH 650V 14A TO220-3 Product overview: IPP65R190CFD7AAKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 14A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 14A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP65R190CFD7AAKSA1 can be used for catalog matching and distributor lookup.

Infineon IPP65R190CFD7AAKSA1

Infineon IPP65R190CFD7AAKSA1

Win Source Part Number: 1382317-IPP65R190CFD7AAKSA1
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Series: Automotive, AEC-Q101, CoolMOS™
Package: Tube
Standard Package: 50 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 77W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 41 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPP65R190
Moisture Sensitivity Level (MSL): 1 (Unlimited)

N-Channel 650V 14A (Tc) 77W (Tc) Through Hole PG-TO220-3

IPP65R190 - CoolMOS N-Channel Power MOSFET