Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP65R190CFD

Description
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 1 2
Request a Quote Datasheet
Description
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPP65R190CFD - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP65R190CFD
500V-950V N-Channel Power MOSFET IPP65R190CFD
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 1 2

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.


Summary of Features

  • 650V technology with integrated fast body diode
  • Limited voltage overshoot during hard commutation
  • Significant Qg reduction compared to 600V CFD technology
  • Tighter RDS(on) max to RDS(on) typ window
  • Easy to design-in
  • Lower price compared to 600V CFD technology

Benefits

  • Low switching losses due to low Qrr at repetitive commutation on body diode
  • Self limiting di/dt and dv/dt
  • Low Qoss
  • Reduced turn on and turn of delay times
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • HID lamp ballast
  • LED lighting
  • eMobility

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • 1EDI20I12MF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs

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Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R190CFD - 040649-IPP65R190CFD - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R190CFD
040649-IPP65R190CFD
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R190CFD 040649-IPP65R190CFD
Manufacturer: Infineon Technologies Win Source Part Number: 040649-IPP65R190CFD Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 151W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 17.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 730μA Max Gate Charge: 68nC @ 10V Max Input Capacitance: 1850pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 7.3A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 040649-IPP65R190CFD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 151W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 17.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 730μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 1850pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 7.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
650V 17.5A TO220 MOSFET Transistor
2088-IPP65R190CFD
650V 17.5A TO220 MOSFET Transistor 2088-IPP65R190CFD
MOSFETs N-Ch 650V 17.5A TO220-3 CoolMOS CFD2 Product overview: IPP65R190CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 17.5A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 17.5A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP65R190CFD can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 650V 17.5A TO220-3 CoolMOS CFD2 Product overview: IPP65R190CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 17.5A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 17.5A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP65R190CFD can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2

MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP65R190CFD 040649-IPP65R190CFD 2088-IPP65R190CFD IPP65R190CFD
Product Name 500V-950V N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R190CFD 650V 17.5A TO220 MOSFET Transistor MOSFET
Polarity N-Channel; N N-Channel; N-Channel N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.1900 ohms
QG 68 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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