Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7
650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
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Manufacturer: Infineon Technologies
Win Source Part Number: 040649-IPP65R190CFD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 151W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 17.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 730μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 1850pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 7.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
MOSFETs N-Ch 650V 17.5A TO220-3 CoolMOS CFD2 Product overview: IPP65R190CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 17.5A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 17.5A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP65R190CFD can be used for catalog matching and distributor lookup.
MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPP65R190CFD | 040649-IPP65R190CFD | 2088-IPP65R190CFD | IPP65R190CFD |
| Product Name | 500V-950V N-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R190CFD | 650V 17.5A TO220 MOSFET Transistor | MOSFET |
| Polarity | N-Channel; N | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.1900 ohms | |||
| QG | 68 nC | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |