Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP65R150CFD

Description
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Applications DIN rail power supplies Uninterruptible power supplies (UPS) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 1 2
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Description
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Applications DIN rail power supplies Uninterruptible power supplies (UPS) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 1 2
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Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPP65R150CFD - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP65R150CFD
500V-950V N-Channel Power MOSFET IPP65R150CFD
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Applications DIN rail power supplies Uninterruptible power supplies (UPS) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 1 2

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.


Summary of Features

  • 650V technology with integrated fast body diode
  • Limited voltage overshoot during hard commutation
  • Significant Qg reduction compared to 600V CFD technology
  • Tighter RDS(on) max to RDS(on) typ window
  • Easy to design-in
  • Lower price compared to 600V CFD technology

Benefits

  • Low switching losses due to low Qrr at repetitive commutation on body diode
  • Self limiting di/dt and dv/dt
  • Low Qoss
  • Reduced turn on and turn of delay times
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • HID lamp ballast
  • LED lighting
  • eMobility

Applications

  • DIN rail power supplies
  • Uninterruptible power supplies (UPS)

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • 1ED44171N01B |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs

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Supplier's Site Datasheet
Electronic Surplus - IPP65R150CFD - 724026-IPP65R150CFD - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IPP65R150CFD
724026-IPP65R150CFD
Electronic Surplus - IPP65R150CFD 724026-IPP65R150CFD
Manufacturer: Infineon Technologies Win Source Part Number: 724026-IPP65R150CFD Manufacturer Homepage: www.infineon.com Reference case: TO-220 Reference Date Code: 1216+ Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 724026-IPP65R150CFD
Manufacturer Homepage: www.infineon.com
Reference case: TO-220
Reference Date Code: 1216+
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

Buy Now
Sheung Wan, Hong Kong
MOSFET N-Ch 700V 22.4A TO220-3

MOSFET N-Ch 700V 22.4A TO220-3

Buy Now Datasheet
Transistors - IPP65R150CFD - ODG (Origin Data Global)
Shenzhen, China
Transistors
IPP65R150CFD
Transistors IPP65R150CFD
TO-220 MOSFETs ROHS

TO-220 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IPP65R150CFD 724026-IPP65R150CFD IPP65R150CFD IPP65R150CFD
Product Name 500V-950V N-Channel Power MOSFET Electronic Surplus - IPP65R150CFD MOSFET Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1500 ohms
QG 86 nC
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