Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7
650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Summary of Features
650V technology with integrated fast body diode
Limited voltage overshoot during hard commutation
Significant Qg reduction compared to 600V CFD technology
Tighter RDS(on) max to RDS(on) typ window
Easy to design-in
Lower price compared to 600V CFD technology
Benefits
Low switching losses due to low Qrr at repetitive commutation on body diode
Self limiting di/dt and dv/dt
Low Qoss
Reduced turn on and turn of delay times
Outstanding CoolMOS™ quality
Potential Applications
Telecom
Server
Solar
HID lamp ballast
LED lighting
eMobility
Applications
DIN rail power supplies
Uninterruptible power supplies (UPS) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs
Download Gate Driver ICs overview
Designers who used this product also designed with
1ED44171N01B | Gate driver ICs
2EDR8259X | Gate driver ICs
6EDL04N06PT | Gate driver ICs
IRS4427S | Gate driver ICs
2ED2110S06M | Gate driver ICs
1EDI20I12MF | Gate driver ICs
1ED44171N01B | Gate driver ICs
2EDR8259X | Gate driver ICs
6EDL04N06PT | Gate driver ICs
IRS4427S | Gate driver ICs
2ED2110S06M | Gate driver ICs
1EDI20I12MF | Gate driver ICs
1ED44171N01B | Gate driver ICs
2EDR8259X | Gate driver ICs
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Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7
650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Summary of Features
- 650V technology with integrated fast body diode
- Limited voltage overshoot during hard commutation
- Significant Qg reduction compared to 600V CFD technology
- Tighter RDS(on) max to RDS(on) typ window
- Easy to design-in
- Lower price compared to 600V CFD technology
Benefits
- Low switching losses due to low Qrr at repetitive commutation on body diode
- Self limiting di/dt and dv/dt
- Low Qoss
- Reduced turn on and turn of delay times
- Outstanding CoolMOS™ quality
Potential Applications
- Telecom
- Server
- Solar
- HID lamp ballast
- LED lighting
- eMobility
Applications
- DIN rail power supplies
- Uninterruptible power supplies (UPS)
EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs
Download Gate Driver ICs overview
Designers who used this product also designed with
- 1ED44171N01B |
Gate driver ICs
- 2EDR8259X |
Gate driver ICs
- 6EDL04N06PT |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- 2ED2110S06M |
Gate driver ICs
- 1EDI20I12MF |
Gate driver ICs
- 1ED44171N01B |
Gate driver ICs
- 2EDR8259X |
Gate driver ICs
- 6EDL04N06PT |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- 2ED2110S06M |
Gate driver ICs
- 1EDI20I12MF |
Gate driver ICs
- 1ED44171N01B |
Gate driver ICs
- 2EDR8259X |
Gate driver ICs
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